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K7A401809A - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

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Part number K7A401809A
Manufacturer Samsung semiconductor
File Size 467.68 KB
Description 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
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K7A403609A K7A401809A 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No History 0.0 Initial draft 0.1 Add tCYC 300MHz. 0.2 1. Changed DC condition at Icc and ISB. Icc ; from 540mA to 590mA at -30, from 490mA to 540mA at -27, from 440mA to 490mA at -25, from 410mA to 460mA at -22, from 390mA to 440mA at -20, from 370mA to 420mA at -18, ISB ; from 190mA to 200mA at -30, from 180mA to 190mA at -27, from 170mA to 180mA at -25, from 160mA to 170mA at -22, from 150mA to 160mA at -20, from 140mA to 150mA at -18, 1.0 1. Final spec release 2. Changed input & output capacitance. CIN ; from 6pF to 5pF, COUT ; from 8pF to 7pF, 3.Changed part number from K7A4036(18)00A -under 167MHz to K7A4036(18)09A -over183MHz 2.0 1.
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