K7N161831B - 512Kx36 & 1Mx18 Pipelined NtRAM

Datasheet Summary

Description

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Features

VDD= 2.5 or 3.3V +/- 5% Power Supply.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no datacontention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.
100-TQFP-1420A (Lead and Lead free package).
165FBGA(11x15 ball aray) w.

Samsung semiconductor

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Datasheet Details

Part number	K7N161831B
Manufacturer	Samsung semiconductor
File Size	603.78 KB
Description	512Kx36 & 1Mx18 Pipelined NtRAM
Datasheet	K7N161831B Datasheet
Additional preview pages of the K7N161831B datasheet.

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K7N163631B K7N161831B 512Kx36 & 1Mx18 Pipelined NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Apr 25, 2011 |