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K7Q163664B

Manufacturer: Samsung Semiconductor

K7Q163664B datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7Q163664B datasheet preview

K7Q163664B Datasheet Details

Part number K7Q163664B
Datasheet K7Q163664B K7Q161864B Datasheet (PDF)
File Size 370.30 KB
Manufacturer Samsung Semiconductor
Description (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q163664B page 2 K7Q163664B page 3

K7Q163664B Overview

Final spec release Draft Date Jan. 18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.

K7Q163664B Key Features

  • 1.8V/2.5V +0.1V/-0.1V Power Supply
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed late write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 4-bit burst for both read and write operation
  • Clock-stop supports to reduce current
  • Two input clocks(K and K) for accurate DDR timing at clock rising edges only
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More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K7Q163662B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163654A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163682A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161854A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q161862B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161864B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q161882A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM

K7Q163664B Distributor

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