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K8D6316UBM Datasheet

Manufacturer: Samsung Semiconductor
K8D6316UBM datasheet preview

Datasheet Details

Part number K8D6316UBM
Datasheet K8D6316UBM_Samsungsemiconductor.pdf
File Size 665.39 KB
Manufacturer Samsung Semiconductor
Description (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UBM page 2 K8D6316UBM page 3

K8D6316UBM Overview

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability.

K8D6316UBM Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations
  • Fast Read Access Time : 70ns
  • Read While Program/Erase Operation
  • Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb
  • Secode(Security Code) Block : Extra 64K Byte block
  • Power Consumption (typical value @5MHz)
  • Read Current : 14mA
  • Program/Erase Current : 15mA
  • Read While Program or Read While Erase Current : 25mA
  • Standby Mode/Auto Sleep Mode : 10µA
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