K8D6316UBM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

Product Overview

Samsung semiconductor

Part number	K8D6316UBM
Manufacturer	Samsung semiconductor
File Size	665.39 KB
Description	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
Datasheet	K8D6316UBM Datasheet
Additional preview pages of the K8D6316UBM datasheet.

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16.

The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group.

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode).
Fast Read Access Time : 70ns.
Read While Program/Erase Operation.
Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb.
Secode(Security Code) Block : Extra 64K Byte block.
Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read Whil.

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Published: Mar 23, 2007 |