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K8D6316UBM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

General Description

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16.

The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group.

Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read Whil.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K8D6316UTM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ. 5uA(max. 18uA) to typ. 10uA(max. 30uA). Not support 48TSOP1 Package Not support 16M/16M BANK partition Support 48TSOP1 Package Support 48TSOP1 Lead Free Package Support 48FBGA Leaded/Lead Free Package Draft Date January 10, 2002 May 22, 2002 June 18, 2003 Remark Preliminary Final 1.2 November 18, 2003 1.3 1.4 1.5 July 22, 2004 September 16, 2004 March 16, 2005 1 Revision 1.5 March 2005 K8D6x16UTM / K8D6x16UBM 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.