| Part number | K8P5516UZB |
|---|---|
| Datasheet | K8P5516UZB_Samsungsemiconductor.pdf |
| File Size | 1.66 MB |
| Manufacturer | Samsung Semiconductor |
| Description | 256Mb B-die NOR FLASH |
|
|
of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised. - "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K8P5616UZB | 256Mb B-die Page NOR FLASH |
| K8P2716UZC | 128Mb C-die Page NOR Flash |
| K8P2815UQC | 128Mb C-die NOR FLASH |
