Samsung semiconductor K8S6415EBB
The K8S6415E featuring single 1.8V power supply is a 64Mbit Muxed Burst Multi Bank Flash Memory organized as 4Mbx16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks with independent hardware protection. This block architecture provides highly flexible erase and program capability.| Part No. | K8S6415EBB |
|---|---|
| Datasheet | K8S6415EBB Download |
| Manufacturer |  Samsung semiconductor |
| Description | 64M Bit Multi Bank NOR Flash Memory |
| Buy | Stock & Price |
FEATURES
● Single Voltage, 1.7V to 1.95V for Read and Write operations● Organization - 4,194,304 x 16 bit ( Word Mode Only)
● Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
● Read While Program/Erase Operation
● Multiple Bank Architecture - 16 Banks (4Mb Partition)
● OTP Block : Extra 256Byte block
● Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz)
● Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap
● Block Architecture - Eight 4Kword blocks and one hundreds twenty seven 32Kword blocks - Bank 0 contains eight 4 Kword blocks and seven 32Kword blocks - Bank 1 ~ Bank 15 contain one hundred twenty 32Kword blocks
● Reduce program time using the VPP
● Support Single & Quad word accelerate program
● Power Consumption (Typical value, CL=30pF) - Burst Access...
