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K91G08Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

General Description

The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.

Key Features

  • D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll. Emitter D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Anode Cath. 4 PIN 8 PIN 16 PIN D CSA (C.
  • UL) 1577 recognized, file number E-76222.
  • Double Protection D Coupling System U C Order Instruction Orderi.

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Full PDF Text Transcription for K91G08Q0M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K91G08Q0M. For precise diagrams, and layout, please refer to the original PDF.

K817P/ K827PH/ K847PH Vishay Telefunken Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a ...

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P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications 14925 Features D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll.

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