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K9F1208U0 - 64M x 8 Bit NAND Flash Memory

Description

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.

The device is offered in 1.8V, 2.7V, 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K9F1208U0A NAND Flash Memory
K9F1208U0B 64M x 8 Bit NAND Flash Memory
K9F1208U0B 64M x 8 Bit NAND Flash Memory
K9F1208U0B-D 64M x 8 Bit NAND Flash Memory
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 14 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block ( page 16 ) -Error in write or read operation ( page 17 ) -Program Flow Chart ( page 17 ) 3. Vcc range is changed -2.4V~2.9V -> 2.5V~2.9V -1.7V~1.95V ->1.65V~1.95V 4. Multi plane operation and Copy-Back Program are not supported with 1.8V device. Draft Date Apr. 24th 2004 Oct. 11th.2004 Remark Advance Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.samsung.
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