Samsung semiconductor K9F1208U0
the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.| Part No. | K9F1208U0 |
|---|---|
| Datasheet | K9F1208U0 Download |
| Manufacturer |  Samsung semiconductor |
| Description | 64M x 8 Bit NAND Flash Memory |
| Buy | Stock & Price |
FEATURES
● Voltage Supply - 1.8V device(K9F1208R0B) : 1.65~1.95V - 2.7V device(K9F1208B0B) : 2.5~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V● Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit
● Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
● Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.) (*K9F1208R0B : tRC = 60ns(Min.)
● Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
● Command Register Operation
● Intelligent Copy-Back
● Unique ID for Copyright Protection
● Package - K9F1208X0B-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1208X0B-GCB0/GIB0 63- Ball FBGA (8.
