K9F1208U0B-Y
Overview
- Voltage Supply - 1.8V device(K9F1208Q0B) : 1.70~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
- Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit
- Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
- Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
- Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
- Command Register Operation
- Intelligent Copy-Back
