Overview: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title
16M x 8 Bit NAND Flash Memory Revision History
Revision No. History
0.0 0.1 0.2 Initial issue. K9F2808U0B(3.3V device)’s qualification is finished K9F2808Q0B (1.8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program operation current (Icc2) from 8mA to 5mA - Changed typical erase operation current (Icc3) from 8mA to 5mA - Changed typical program time(tPROG) from 200us to 300us - Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns - Changed CLE hold time(tCLH) from 10ns to 15ns - Changed CE hold time(tCH) from 10ns to 15ns - Changed ALE hold time(tALH) from 10ns to 15ns - Changed Data hold time(tDH) from 10ns to 15ns - Changed CE Access time(tCEA) from 45ns to 60ns - Changed Read cycle time(tRC) from 50ns to 70ns - Changed Write Cycle time(tWC) from 50ns to 70ns - Changed RE Access time(tREA) from 35ns to 40ns - Changed RE High Hold time(tREH) from 15ns to 20ns - Changed WE High Hold time(tWH) from 15ns to 20ns 1. Device Code is changed - TBGA package information : ’B’ --> ’D’ ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 2. V IH ,VIL of K9F2808Q0B(1.8 device) is changed (before revision) Input High Voltage Input Low Voltage, All inputs V IH I/O pins Except I/O pins VccQ-0.4 V CC-0.4 0 (after revision) I/O pins Input High Voltage V IH Except I/O pins Input Low Voltage, All inputs V IL V CC-0.4 -0.3 VccQ-0.4 VccQ +0.3 VCC +0.3 0.4 VccQ VCC 0.4 Draft Date
May 28’th 2001 Jun. 30th 2001 Remark
Advance Jul. 30th 2001 K9F2808Q0B : Preliminary 0.3 Aug.
