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K9F5608U0A Datasheet

Manufacturer: Samsung Semiconductor
K9F5608U0A datasheet preview

Datasheet Details

Part number K9F5608U0A
Datasheet K9F5608U0A_Samsungsemiconductor.pdf
File Size 610.13 KB
Manufacturer Samsung Semiconductor
Description 32M x 8 Bit NAND Flash Memory
K9F5608U0A page 2 K9F5608U0A page 3

K9F5608U0A Overview

The WE must be held high when outputs are activated. 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any mand sequences ~ 2.5V Preliminary 0.3 Mar.

K9F5608U0A Key Features

  • Voltage Supply : 2.7V~3.6V
  • Organization
  • Memory Cell Array : (32M + 1024K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (16K + 512)Byte
  • 528-Byte Page Read Operation
  • Random Access : 10µs(Max.)
  • Serial Page Access : 50ns(Min.)

K9F5608U0C from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung Logo K9F5608U0C NAND Flash Memory Samsung
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

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Part Number Description
K9F5608U0A-YCB0 32M x 8 Bit NAND Flash Memory
K9F5608U0A-YIB0 32M x 8 Bit NAND Flash Memory
K9F5608U0 32M x 8 Bit NAND Flash Memory
K9F5608U0B 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DIB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FCB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FIB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-HCB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-HIB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

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