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K9F5616Q0B-HCB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

This page provides the datasheet information for the K9F5616Q0B-HCB0, a member of the K9F 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory family.

Datasheet Summary

Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity.

The device is offered in 1.8V or 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.

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Datasheet preview – K9F5616Q0B-HCB0

Datasheet Details

Part number K9F5616Q0B-HCB0
Manufacturer Samsung semiconductor
File Size 604.94 KB
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Datasheet download datasheet K9F5616Q0B-HCB0 Datasheet
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Full PDF Text Transcription

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K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don’ t care ==> A3 ~ A7 are "L" 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3.
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