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K9K1208D0C - 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

General Description

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage supply : 2.7V ~ 5.5V.
  • Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit.
  • Automatic Program and Erase(Typical) - Page Program : (256 + 8)Byte in 250µs - Block Erase : (4K + 128)Byte in 2ms - Status Register.
  • 264-Byte Page Read Operation - Random Access : 10µs(Max. ) - Serial Page Access : 80ns(Min. ).
  • System Performance Enhancement - Ready/ Busy Status Output.
  • Command/Address/Data Multiplexed I.

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📁 Similar Datasheet

Part Number Description Manufacturer
K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung
K9K2G08U0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung
K9K2G08U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung
K9K2G16Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung
K9K2G16Q0M-P 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K9K1208Q0C 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
K9K1208U0A-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0A-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0A-YCB0 64M x 8 Bit NAND Flash Memory
K9K1208U0A-YIB0 64M x 8 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No. 0.0 1.0 History Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms(Max.) Data sheet 1998 1. Cjanged DC and Operating Characteristics Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.7V~3.6V Typ 10 → 5 10 → 5 10 → 5 5 → 10 Max 20 → 10 20 → 10 20 → 10 50 10 → ±10 10 → ±10 Vcc=3.6V~5.5V Typ 15 → 10 15 → 10 15 → 10 10 Max 30 → 20 30 → 20 30 → 20 100 → 50 10 → ±10 10 → ±10 µA mA Unit Draft Date April 10th 1997 April 10th 1998 Remark Advance Preliminary 1.1 July 14th 1998 Final 1.