Samsung semiconductor K9K1216D0C
The K9K1208U0M are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The I/O pins serve as the ports for address and data input/output as well as command inputs.| Part No. | K9K1216D0C |
|---|---|
| Datasheet | K9K1216D0C Download |
| Manufacturer |  Samsung semiconductor |
| Description | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory |
| Buy | Stock & Price |
FEATURES
● Voltage Supply : 2.7V~3.6V● Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit
● Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
● 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 60ns(Min.)
● Fast Write Cycle Time - Program time : 200µ s(Typ.) - Block Erase Time : 2ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
● Command Register Operation
● Package : - K9K1208U0M-YCB0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
A program operation programs the 528byte page in typically 200µs and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data.
