• Part: K9K1216D0C
  • Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 354.28 KB
K9K1216D0C Datasheet (PDF) Download
Samsung Semiconductor
K9K1216D0C

Description

The K9K1208U0M are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit.

Key Features

  • Voltage Supply : 2.7V~3.6V
  • Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
  • 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 60ns(Min.)
  • Fast Write Cycle Time - Program time : 200µ s(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
  • mand Register Operation