K9K2G08U0M-PIB0
Key Features
- Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O P
- Part: K9K2G08U0M-PIB0
- Description: 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
- Manufacturer: Samsung Semiconductor
- Size: 734.52 KB