Samsung semiconductor K9K2G08U1A
The value of tREA for 3.3V device is changed.(18ns->20ns) 2. The flow chart to creat the initial invalid block table is cahnged.| Part No. | K9K2G08U1A |
|---|---|
| Datasheet | K9K2G08U1A Download |
| Manufacturer |  Samsung semiconductor |
| Description | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| Buy | Stock & Price |
FEATURES
● Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V● Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit
● Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
● Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max.) - Serial Access : 30ns(Min.) - 3.3v device 50ns(Min.) -1.8v device
● Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
● Command/Address/Data Multiplexed I/O Port
● Hardware Data Protection - Program/Erase Lockout During Power Transitions
● Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
● Command Register Operation
● Cache Program Operation for High Performance Program
● Intelligent Copy-Back Operation
● Unique ID for Copyright Protection
● Package : - K9F1G08U0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20...
