• Part: K9K2G08U1A
  • Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 1.05 MB
K9K2G08U1A Datasheet (PDF) Download
Samsung Semiconductor
K9K2G08U1A

Description

Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity.

Key Features

  • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
  • Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max.) - Serial Access : 30ns(Min.) - 3.3v device 50ns(Min.) -1.8v device
  • Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
  • mand Register Operation
  • Cache Program Operation for High Performance Program
  • Intelligent Copy-Back Operation