K9K8G08U0M Datasheet (1G x 8 Bit / 2G x 8 Bit NAND Flash Memory)

Part: K9K8G08U0M
Manufacturer: Samsung Semiconductor
Size: 1.43 MB

K9K8G08U0M Key Features

Voltage Supply
2.70V ~ 3.60V
Organization
Memory Cell Array : (512M + 16,384K)bit x 8bit
Data Register : (2K + 64)bit x 8bit
Automatic Program and Erase
Page Program : (2K + 64)Byte
Block Erase : (128K + 4K)Byte
Page Read Operation
Page Size : (2K + 64)Byte

Other K9K8G08U0M Datasheets

Manufacturer	Part Number	Description
Samsung Semiconductor	K9K8G08U0M	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Samsung Semiconductor	K9K8G08U0D	4Gb D-die NAND Flash
Samsung Semiconductor	K9K8G08U0E	4Gb E-die NAND Flash
Samsung Semiconductor	K9K8G08U0F	4Gb F-die NAND Flash

View all K9K8G08U0M datasheets →

K9K8G08U0M Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block.