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K9K8G08U0M Datasheet

Manufacturer: Samsung Semiconductor
K9K8G08U0M datasheet preview

K9K8G08U0M Details

Part number K9K8G08U0M
Datasheet K9K8G08U0M K9K8G08U1M Datasheet (PDF)
File Size 1.43 MB
Manufacturer Samsung Semiconductor
Description 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9K8G08U0M page 2 K9K8G08U0M page 3

K9K8G08U0M Overview

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block.

K9K8G08U0M Key Features

  • Voltage Supply
  • 2.70V ~ 3.60V
  • Organization
  • Memory Cell Array : (512M + 16,384K)bit x 8bit
  • Data Register : (2K + 64)bit x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation
  • Page Size : (2K + 64)Byte

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