K9K8G08U0M Datasheet PDF (1G x 8 Bit / 2G x 8 Bit NAND Flash Memory) | Download Samsung semiconductor K9K8G08U0M

K9K8G08U0M - 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

This page provides the datasheet information for the K9K8G08U0M, a member of the K9K8G08U1M 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory family.

Description

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (512M + 16,384K)bit x 8bit - Data Register : (2K + 64)bit x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Mult.

Datasheet Details

Part number	K9K8G08U0M
Manufacturer	Samsung Semiconductor
File Size	1.43 MB
Description	1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Datasheet	K9K8G08U0M Datasheet
Additional preview pages of the K9K8G08U0M datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com K9K8G08U1M K9F4G08U0M Advance FLASH MEMORY Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History 1. Initial issue Draft Date Nov. 15. 2004 Remark Advance DataShee DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. DataSheet4U.com 1 DataSheet 4 U .com www.DataSheet4U.

Published: Nov 4, 2005 |