K9T1G08U0M
Key Features
- Voltage Supply : 2.7V ~ 3.6V
- Organization - Memory Cell Array : (128M + 4,096K)bits x 8bits - Data Register : (512 + 16)bits x 8bits
- Automatic Program and Erase - Page Program : (512 + 16)bits x 8bits - Block Erase : (16K + 512)Bytes
- Page Read Operation - Page Size : (512 + 16)Bytes - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
- Command/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention :
