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K9T1G08U0M Datasheet

Manufacturer: Samsung Semiconductor
K9T1G08U0M datasheet preview

K9T1G08U0M Details

Part number K9T1G08U0M
Datasheet K9T1G08U0M_Samsungsemiconductor.pdf
File Size 937.32 KB
Manufacturer Samsung Semiconductor
Description 128M x 8 Bits NAND Flash Memory
K9T1G08U0M page 2 K9T1G08U0M page 3

K9T1G08U0M Overview

Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

K9T1G08U0M Key Features

  • Voltage Supply : 2.7V ~ 3.6V
  • Organization
  • Memory Cell Array : (128M + 4,096K)bits x 8bits
  • Data Register : (512 + 16)bits x 8bits
  • Automatic Program and Erase
  • Page Program : (512 + 16)bits x 8bits
  • Block Erase : (16K + 512)Bytes
  • Page Read Operation
  • Page Size : (512 + 16)Bytes
  • Random Access : 15µs(Max.)

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