Datasheet4U Logo Datasheet4U.com

K9WAG08U1A Datasheet (k9xxg08uxa) 1g X 8 Bit / 2g X 8 Bit / 4g X 8 Bit Nand Flash Memory

Manufacturer: Samsung Semiconductor

Overview: .. K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Voltage Supply - 2.70V ~ 3.60V.
  • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9NBG08U5A : 50ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
  • Command.

K9WAG08U1D from other manufacturers

Brand Logo Part Number Description Other Manufacturers
Samsung Logo K9WAG08U1D 4Gb D-die NAND Flash Samsung
Samsung Logo K9WAG08U1E 4Gb E-die NAND Flash Samsung
Samsung Logo K9WAG08U1F 4Gb F-die NAND Flash Samsung

More Datasheets from Samsung Semiconductor

Part Number Description
K9WAG08U1M (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

K9WAG08U1A Distributor