K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

This page provides the datasheet information for the K9WAG08U1A, a member of the K9K-8G08 (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K9WAG08U1A
Manufacturer	Samsung semiconductor
File Size	1.23 MB
Description	(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
Datasheet	K9WAG08U1A Datasheet
Additional preview pages of the K9WAG08U1A datasheet.

K9WAG08U1A Product details

Description

Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit.

Its NAND cell provides the most costeffective solution for the solid state application market.

Features

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
K9NBG08U5A : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command.

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Other Datasheets by Samsung semiconductor

K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

Published: Mar 23, 2007 |