Datasheet Details
| Part number | KA100O015E-BJTT |
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| Manufacturer | Samsung Semiconductor |
| File Size | 1.78 MB |
| Description | 2CKE DDP Mobile DDR SDRAM |
| Datasheet |
 KA100O015E-BJTT Datasheet
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General Description
The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM.
NAND cell provides the most cost-effective solution for the solid state application market.
Key Features
- Operating Temperature : -25°C ~ 85°C.
- Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch.
- Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
- Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
- Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
- Page Read Operation - Page Size : (2K + 64)Word - R.