KA236-2.5 Datasheet | Samsung Semiconductor

FEATURES - Low temperature coefficient - Guaranteed temperature stability 4m V typical - 0.2 dynamic impedance - 1.0% initial tolerance available. - Easily trimmed for minimum temperature drift ORDERING INFORMATION Device KA336-2.5 KA336-2.5B KA236-2.5 TO-92 Package Operating Temperature 0 ~ 70 Î & & - 25 ~ +85 SCHEMATIC DIAGRAM KA336-2.5/B/KA236-2.5 PROGRAMMABLE SHUNT REGULATOR ABSOLUTE MAXIMUM RATINGS Characteristic Reverse Current Forward Current Operating Temperature Range KA336-2.5/B KA236-2.5 Storage Temperature Range Symbol IR IF T OPR T STG Value 15 10 0 ~ + 70 - 25 ~ +85 - 60 ~ + 150 Unit m A m A & & & ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Breakdown Change with Current Reverse Dynamic Impedance Temperature Stability Reverse Breakdown Change with Current Reverse Dynamic Impedance Long Term Stability KA236: T MIN = -25 , T MAX = 85 KA336: T MIN = 0 , T MAX = 70 Symbol VR (T MIN < T A< T MAX, unless otherwise specified) KA336/236 Min 2.44 Typ 2.49 2.6 0.2 1.8 3 0.4 20 Max 2.54 6 0.6 6 10 1 Min 2.465 KA336B Typ 2.49 2.6 0.2 1.8 3 0.4 20 Max 2.515 10 1 6 12 1.4 Unit V m V Test Conditions ºV /ºI ZD ST T & T = 25& 400âAI 10m A T = 25& T A = 25 IR = 1m A ºV /ºI ZD ST & & & & T T T 400âAI 10m A I = 1m A T T T I = 1m A T T T MIN A MAX R R MIN A MAX R MIN A MAX IR = 1m A IR = 1m A T MIN T A T...