• Part: KBE00F005A-D411
  • Description: 512Mb NANDx2 + 256Mb Mobile SDRAMx2
  • Manufacturer: Samsung Semiconductor
  • Size: 1.32 MB
KBE00F005A-D411 Datasheet (PDF) Download
Samsung Semiconductor
KBE00F005A-D411

Description

The KBE00F005A is a Multi Chip Package Memory which bines 1Gbit Nand Flash Memory(organized with two pieces of 512Mbit Nand Flash Memory) and 512Mbit synchronous high data rate Dynamic RAM.(organi.

Key Features

  • Operating Temperature : -25°C ~ 85°C
  • Package : 137ball FBGA Type - 10.5mmx13mm, 0.8mm pitch <NAND>
  • Power Supply Voltage : 2.5~ 2.9V
  • Organization - Memory Cell Array : (128M + 4096K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte
  • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.)
  • Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years