• Part: KBE00S003M-D411
  • Description: 1Gb NANDx2 + 256Mb Mobile SDRAMx2
  • Manufacturer: Samsung Semiconductor
  • Size: 1.77 MB
Download KBE00S003M-D411 Datasheet PDF
KBE00S003M-D411 page 2
Page 2
KBE00S003M-D411 page 3
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KBE00S003M-D411 Key Features

  • Operating Temperature : -25°C ~ 85°C
  • Package : 107-ball FBGA Type
  • 12x14mm, 0.8mm pitch <NAND>
  • Power Supply Voltage : 2.5~2.9V
  • Organization
  • Memory Cell Array : (256M + 8,192K)bits x 8bits
  • Data Register : (512 + 16)bits x 8bits
  • Automatic Program and Erase
  • Page Program : (512 + 16)bits x 8bits
  • Block Erase : (16K + 512)Bytes