KBE00S009M-D411
Description
The KBE00S009M is a Multi Chip Package Memory which bines 2Gbit Nand Flash Memory(organized with two pieces of 1G bit Nand Flash Memory) and 512Mbit synchronous high data rate Dynamic RAM.(organized with two pieces of 256Mbit Mobile SDR.
Key Features
- Operating Temperature : -25°C ~ 85°C
- Package : 137-ball FBGA Type - 12x14mm, 0.8mm pitch <NAND>
- Power Supply Voltage : 2.5~2.9V
- Organization - Memory Cell Array : (256M + 8,192K)bits x 8bits - Data Register : (512 + 16)bits x 8bits
- Automatic Program and Erase - Page Program : (512 + 16)bits x 8bits - Block Erase : (16K + 512)Bytes
- Page Read Operation - Page Size : (512 + 16)Bytes - Random Access : 15µs(Max.) - Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
