KBY00U00VA-B450 - 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS

Description

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM).

Features

Operating Temperature : -25°C ~ 85°C.
Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch.
Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
Page Read Operation - Page Size : (2K + 64)Word - Random.

Samsung semiconductor

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Datasheet Details

Part number	KBY00U00VA-B450
Manufacturer	Samsung semiconductor
File Size	1.78 MB
Description	8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS
Datasheet	KBY00U00VA-B450 Datasheet
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Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.

Published: Apr 25, 2011 |