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KBY00U00VA-B450 Datasheet 8gb Ddp (512m X16) Nand Flash + 4gb (64m X32 + 64m X32) 2/cs

Manufacturer: Samsung Semiconductor

Overview: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP (512M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. .. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- KBY00U00VA-B450 datasheet History Draft Date Jun. 10, 2010 Rev. 1.0 MCP Memory Revision History Revision No. 0.0 Remark Preliminay Editor H.J.Min Initial issue. - 8Gb DDP NAND Flash V-die_Ver 0.0 - 4Gb DDP Mobile DDR C-die_Ver 0.2 - Finalized _Ver 1.1 Revision 1.0v 1. Chapter 2.2 Remended Operating Conditions revised. Revision 1.1v 1. Chapter 2.8 Read / Program / Erase Characteristics Parameter reviesed. _Ver 1.0 - Corrected errata. - Revised DC characteristics. 1.0 Jul. 28, 2010 Final J.S.Ahn .. -2- KBY00U00VA-B450 datasheet Rev. 1.0 MCP Memory 1.

Key Features

  • Operating Temperature : -25°C ~ 85°C.
  • Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch.
  • Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
  • Page Read Operation - Page Size : (2K + 64)Word - Random.

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