Datasheet4U Logo Datasheet4U.com

KFG5616Q1M-DEB Datasheet OneNAND256 FLASH MEMORY

Manufacturer: Samsung Semiconductor

Overview: OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 Version: Ver. 1.2 Date: June 15th, 2005 1 OneNAND256 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND™‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their rightful owners. Copyright © 2005, Samsung Electronics Company, Ltd 2 OneNAND256 Document Title OneNAND FLASH MEMORY www.DataSheet4U.com Revision History Revision No. History 0.0 0.5 Initial issue. 1. Modified to preliminary specification. 2. Add the cache read operation and DQ toggling scheme. 1. Corrected the errata 2.

General Description

is revised.

3.

Changed Read while Load and Write While Program diagram.

Key Features

  • Design Technology: 0.12µm.
  • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM.
  • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www. DataSheet4U. com.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous B.