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KFG5616Q1M-DEB - OneNAND256 FLASH MEMORY

Datasheet Summary

Description

is revised.

3.

Changed Read while Load and Write While Program diagram.

Features

  • Design Technology: 0.12µm.
  • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM.
  • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www. DataSheet4U. com.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous B.

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Datasheet Details

Part number KFG5616Q1M-DEB
Manufacturer Samsung semiconductor
File Size 1.29 MB
Description OneNAND256 FLASH MEMORY
Datasheet download datasheet KFG5616Q1M-DEB Datasheet
Additional preview pages of the KFG5616Q1M-DEB datasheet.

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Full PDF Text Transcription

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OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 Version: Ver. 1.2 Date: June 15th, 2005 1 OneNAND256 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
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