KFW4G16Q2M Overview
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
KFW4G16Q2M datasheet by Samsung Semiconductor.
| Part number | KFW4G16Q2M |
|---|---|
| Datasheet | KFW4G16Q2M_Samsungsemiconductor.pdf |
| File Size | 1.76 MB |
| Manufacturer | Samsung Semiconductor |
| Description | FLASH MEMOR |
|
|
|
Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1. Added Copy-back Program Operation With Random Data Input 3. Pended Active Erase Current.
View KFW4G16Q2A-DEBx datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
KFW4G16Q2A-DEBx | FLASH MEMORY | Samsung Electronics |
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| KFW4G1612M-DEB5 | FLASH MEMORY |
| KFW8G16Q2M | 2Gb OneNAND M-Die |