KM23C4100DT Datasheet PDF - Samsung semiconductor 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM Specs

KM23C4100DT - 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

Datasheet Summary

Description

The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as 262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single po

Features

Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode).
Fast access time : 80ns(Max. ).
Supply voltage : single +5V.
Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. KM23C4100D(E)T : 44-TSOP2-400 CMOS MASK ROM.

Datasheet Details

Part number	KM23C4100DT
Manufacturer	Samsung semiconductor
File Size	72.45 KB
Description	4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
Datasheet	KM23C4100DT Datasheet
Additional preview pages of the KM23C4100DT datasheet.

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Full PDF Text Transcription

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KM23C4100D(E)T 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C4100D(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as 262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.

Published: Apr 4, 2005 |