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KM416C1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Datasheet Summary

Description

This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

Features

  • of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Datasheet Details

Part number KM416C1200B
Manufacturer Samsung semiconductor
File Size 84.70 KB
Description 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
Datasheet download datasheet KM416C1200B Datasheet
Additional preview pages of the KM416C1200B datasheet.

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Full PDF Text Transcription

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KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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