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KM416C4100B - 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

General Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM416C4100C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4104C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4000B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4000C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4004C 4M x 16bit CMOS Dynamic RAM with Extended Data Out

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KM416C4000B, KM416C4100B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM416C4000B(5.0V, 8K Ref.) - KM416C4100B(5.0V, 4K Ref.) • Active Power Dissipation Unit : mW Speed -45 -5 -6 • Refresh Cycles Part NO.