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KM416V1004C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

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Samsung semiconductor

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KM416V1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out by Samsung semiconductor - Datasheet Preview — Datasheet preview – KM416V1004C

Datasheet Details

Part number	KM416V1004C
Manufacturer	Samsung semiconductor
File Size	804.64 KB
Description	1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Datasheet	KM416V1004C Datasheet
Additional preview pages of the KM416V1004C datasheet.

Product details

Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Other Datasheets by Samsung semiconductor

KM416V1004A - 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
KM416V1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1204BJ - 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT

Published: Apr 4, 2005 |