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KM416V1004C - 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM416V1004A 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
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