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KM416V254D - 256K x 16Bit CMOS Dynamic RAM with Extended Data Out

Description

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
  • Extended Data Out Mode operation.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM416V256B 256K x 16Bit CMOS Dynamic RAM
KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1004A 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT

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KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
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