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KM416V4004B - 4M x 16bit CMOS Dynamic RAM with Extended Data Out

General Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM416V4004C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416V4000B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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KM416V4100C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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KM416V4004B, KM416V4104B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.