Datasheet4U Logo Datasheet4U.com

KM41V4000D - 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

Datasheet Summary

Description

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.

📥 Download Datasheet

Datasheet preview – KM41V4000D

Datasheet Details

Part number KM41V4000D
Manufacturer Samsung semiconductor
File Size 340.77 KB
Description 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
Datasheet download datasheet KM41V4000D Datasheet
Additional preview pages of the KM41V4000D datasheet.

📁 Similar Datasheet

  • KM4100 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4101 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4110 - 0.5mA/ Low Cost/ +2.7V & +5V/ 75MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4111 - 0.2mA/ Low Cost/ +2.7V & +5V/ 35MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4112 - 70A/ Low Cost/ +2.7V & +5V/ 7.3MHz Rail-to-Rail Amplifier (Fairchild Semiconductor)
  • KM4120 - 0.5mA/ Low Cost/ +2.7V & +5V/ 75MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4121 - 0.2mA/ Low Cost/ +2.7V & +5V/ 35MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM41464A - 64K x 4-Bit DRAM (Samsung Electronics)
  • KM416C1200AT-6T - C-MOS 1M 16-BIT DYNAMIC RAM (ETC)
  • KM416S1020BT-G10T - CMOS 16M-Bit SDRAM (ETC)
Other Datasheets by Samsung semiconductor
  • KM41V16000C - 16M x 1Bit CMOS Dynamic RAM
  • KM41256A - 256K X 1 Bit Dynamic RAM with Page / Nibble Mode
  • KM41257A - 256K X 1 Bit Dynamic RAM with Page / Nibble Mode
  • KM4132G271A - 128K x 32Bit x 2 Banks Synchronous Graphic RAM
  • KM4132G271B - 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
  • KM4132G512A - 256K X 32Bit X 2 Banks Synchronous Graphic RAM
  • KM4164B - 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE
  • KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Full PDF Text Transcription

Click to expand full text
KM41C4000D, KM41V4000D CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version. This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
Published: |