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KM6164000B - 256Kx16 bit Low Power CMOS Static RAM

General Description

The KM616V4000B families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and small package types for user flexibility of system design.

Key Features

  • Process Technology : TFT.
  • Organization : 256Kx16.
  • Power Supply Voltage : 4.5~5.5V.
  • Low Data Retention Voltage : 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type : 44-TSOP2-400F/R CMOS SRAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft Revise - Die name change ; A to B Finalize Revise - Operating current update and release. ICC(Read/Write) = 30/60 → 15/75mA ICC1(Read/Write) = 30/60 → 15/75mA ICC2 = 160 → 130mA Revise - Change datasheet format - Remove ICC write value from table. Revise - Change test load at 55ns: 100pF → 50pF Errarta correction Draft Data June 28, 1996 September 19, 1996 Remark Advance Preliminary 1.0 2.0 December 17, 1996 February 17, 1997 Final Final 3.0 February 17, 1998 Final 4.0 4.01 June 22, 1998 August 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.