Samsung semiconductor KM681000C
The KM681000C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current.| Part No. | KM681000C |
|---|---|
| Datasheet | KM681000C Download |
| Manufacturer |  Samsung semiconductor |
| Description | 128K x8 bit Low Power CMOS Static RAM |
| Buy | Stock & Price |
FEATURES
● Process Technology: TFT● Organization: 128K x8
● Power Supply Voltage: 4.5~5.5V
● Low Data Retention Voltage: 2V(Min)
● Three state output and TTL Compatible
● Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R CMOS SRAM
GENERAL DESCRIPTION
PRODUCT FAMILY Product Family Power Dissipation Operating Temperature Vcc Range Speed Standby (ISB1, Max) 50µA 10µA 50µA 15µA 60mA 32-SOP 32-TSOP1-F/R Operating (ICC2, Max) PKG Type KM681000CL KM681000CL-L KM681000CLI KM681000CLI-L Commercial(0~70°C) 4.5~5.5V Industrial(-40~85°C) 55/70ns 32-DIP, 32-SOP 32-TSOP1-F/R 70ns PINDESCRIPTION
A11 A9 A8 VCC A13 WE A15 CS2 CS2 A15 VCC WE N.C A13 A16 A14 A8 A12 A9 A7 A6 A11 A5 OE A4 A10 CS1 A4 A5 A6 A7 I/O6 A12 I/O5 A14 A16 I/O4 N.C VCC A15 CS2 WE A13 A8 A9 A11 I/O8 I/O7 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 FUNCTIONAL BLOCK DIAGRAM OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 Clk gen. Precharge circuit.
