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KM681000C - 128K x8 bit Low Power CMOS Static RAM

General Description

The KM681000C families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

Key Features

  • Process Technology: TFT.
  • Organization: 128K x8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R CMOS SRAM.

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📁 Similar Datasheet

Part Number Description Manufacturer
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KM684000B 512Kx8 bit Low Power CMOS Static RAM Samsung
KM684000C 512Kx8 bit Low Power CMOS Static RAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
KM681000E 128Kx8 bit Low Power CMOS Static RAM
KM681001A 128K x 8 Bit High-Speed CMOS Static RAM
KM681001A 128K x 8 Bit High-Speed CMOS Static RAM
KM681001B 128K x 8 Bit High-Speed CMOS Static RAM
KM681002A 128Kx8 High Speed Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY KM681000C Family Document Title 128K x8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commercial part Remove 55ns and 100ns from industrial part. Draft Date November 22, 1995 April 15, 1996 Remark Design target Preliminary www.DataSheet4U.com 1.0 September 5, 1996 Final 2.0 November 5, 1997 Final The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO.