Datasheet4U Logo Datasheet4U.com

M366S6453CTS - PC133/PC100 Unbuffered DIMM

Description

The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • 1120 1120 1040 1040 mA 1 ICC5 ICC6 2,000 1,840 1,760 1,760 48 24 mA mA mA 2 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

📥 Download Datasheet

Datasheet preview – M366S6453CTS

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com M366S6453CTS M366S6453CTS SDRAM DIMM PC133/PC100 Unbuffered DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S6453CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.
Published: |