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M470T6554CZ0 Datasheet Ddr2 Unbuffered Sodimm

Manufacturer: Samsung Semiconductor

Overview: 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 Unbuffered SODIMM Ordering Information Part Number M470T3354CZ0-C(L)D6/E6/D5/CC M470T6554CZ0-C(L)D6/E6/D5/CC M470T2953CZ0-C(L)D6/E6/D5/CC DDR2 SDRAM Number of Rank 1 2 2 Density 256MB 512MB 1GB Organization 32Mx64 64Mx64 128Mx64 Component Composition 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*4 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*8 64Mx8(K4T51083QC-C(L)D6/E6/D5/CC)*16 Height 30mm 30mm 30mm Note: “Z” of Part number stand for Lead-free products.

Key Features

  • Performance range D6(DDR2-667) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 667 667 4-4-4 E6(DDR2-667) 400 533 667 5-5-5 D5(DDR2-533) 400 533 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
  • 4 independent internal banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.

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