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M470T6554CZ0

Manufacturer: Samsung Semiconductor
M470T6554CZ0 datasheet preview

Datasheet Details

Part number M470T6554CZ0
Datasheet M470T6554CZ0_Samsungsemiconductor.pdf
File Size 270.34 KB
Manufacturer Samsung Semiconductor
Description DDR2 Unbuffered SODIMM
M470T6554CZ0 page 2 M470T6554CZ0 page 3

M470T6554CZ0 Overview

256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. “Z” of Part number stand for Lead-free products.

M470T6554CZ0 Key Features

  • Performance range
  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 4 independent internal banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
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