Datasheet4U Logo Datasheet4U.com

M470T6554CZ0 - DDR2 Unbuffered SODIMM

Description

Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Add

Features

  • Performance range D6(DDR2-667) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 667 667 4-4-4 E6(DDR2-667) 400 533 667 5-5-5 D5(DDR2-533) 400 533 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
  • 4 independent internal banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.

📥 Download Datasheet

Datasheet preview – M470T6554CZ0
Other Datasheets by Samsung semiconductor

Full PDF Text Transcription

Click to expand full text
256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256MB, 512MB, 1GB Unbuffered SODIMMs DDR2 Unbuffered SODIMM Ordering Information Part Number M470T3354CZ0-C(L)D6/E6/D5/CC M470T6554CZ0-C(L)D6/E6/D5/CC M470T2953CZ0-C(L)D6/E6/D5/CC DDR2 SDRAM Number of Rank 1 2 2 Density 256MB 512MB 1GB Organization 32Mx64 64Mx64 128Mx64 Component Composition 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*4 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*8 64Mx8(K4T51083QC-C(L)D6/E6/D5/CC)*16 Height 30mm 30mm 30mm Note: “Z” of Part number stand for Lead-free products.
Published: |