MR16R1628AF0 Datasheet | Samsung Semiconductor

Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including puter memory, personal puters, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. RDRAM Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency Speed Organization Bin t RAC I/O (Row Freq. Access (MHz) Time) ns 800 800 1066 1066 800 800 1066 1066 800 800 1066 1066 800 800 40 45 32P 32 40 45 32P 32 40 45 32P 32 40 45 Part Number 32M x 16/18 -CM8 -CK8 -CT9 MR16/18R1622AF0-CM8 MR16/18R1622AF0-CK8 MR18R1624AF1-CT9 MR18R1624AF1-CN9 MR16/18R1624AF0-CM8 MR16/18R1624AF0-CK8 MR18R1628AF1-CT9 MR18R1628AF1-CN9 MR16/18R1628AF0-CM8 MR16/18R1628AF0-CK8 MR18R162GAF0-CT9 MR18R162GAF0-CN9 MR16/18R162GAF0-CM8 MR16/18R162GAF0-CK8 64M x 16/18 -CN9 -CM8 -CK8 -CT9 128M x 16/18 -CN9 -CM8 -CK8 -CT9 Features 256M x 16/18 -CN9 -CM8 -CK8 - High speed up to 1066 MHz RDRAM storage - 184 edge connector pads with 1mm pad spacing - Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb base RIMM Module - Module PCB size : 133.35mm x 34.93mm x 1.27mm Form Factor The RIMM modules are...