MR186R1628AF0 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MR186R1628AF0
Datasheet	MR186R1628AF0 MR16R1622AF0 Datasheet (PDF)
File Size	419.61 KB
Manufacturer	Samsung Semiconductor
Description	(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die

MR186R1628AF0 Overview

MR16R1622(4/8/G)AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) First copy. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

MR186R1628AF0 Key Features

CN9 -CM8 -CK8
High speed up to 1066 MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Module PCB size : 133.35mm x 31.75mm x 1.27mm
256Mb base RIMM Module
Module PCB size : 133.35mm x 34.93mm x 1.27mm
288Mb base RIMM Module
Each RDRAM device has 32 banks, for a total of 512, 256

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number	Description
MR18R1622AF0	(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624AF0	(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1624DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624GEG0	Key Timing Parameters
MR18R1628DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1628DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1628GEG0	Key Timing Parameters

Datasheet Details

MR186R1628AF0 Overview

MR186R1628AF0 Key Features

More Datasheets from Samsung Semiconductor

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