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MR18R1622DF0

Manufacturer: Samsung Semiconductor

MR18R1622DF0 datasheet by Samsung Semiconductor.

MR18R1622DF0 datasheet preview

MR18R1622DF0 Datasheet Details

Part number MR18R1622DF0
Datasheet MR18R1622DF0 MR18R16224DF0 Datasheet (PDF)
File Size 442.47 KB
Manufacturer Samsung Semiconductor
Description (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0 page 2 MR18R1622DF0 page 3

MR18R1622DF0 Overview

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) First copy. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

MR18R1622DF0 Key Features

  • High speed up to 1066 MHz RDRAM storage
  • 184 edge connector pads with 1mm pad spacing
  • Module PCB size : 133.35mm x 31.75mm x 1.27mm
  • 256Mb and 288Mb base PC800 RIMM Module
  • Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”)
  • 256Mb and 288Mb base PC1066 RIMM Module
  • Gold plated edge connector pad contacts
  • Serial Presence Detect(SPD) support
  • Operates from a 2.5 volt supply (±5%)
  • Powerdown self refresh modes

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