S1T2418G01 Datasheet | Samsung Semiconductor

FEATURES - - - - - - - - Built-in full wave bridge diode rectifier Low current consumption, in order to allow the parallel operation of 4 devices Few external ponents Tone and adjustable switching frequencies by external ponents High noise immunity to current hysteresis due to built-in voltage Adjustable activation voltage Internal zener diodes to protect against over-voltages Adjustable ringer impedance with external ponents APPLICATIONS - - Electronic telephone ringers Extension ringers ORDERING INFORMATION Device S1T2418G01-D0B0 S1T2418D02-D0B0 Package 8- DIP- 300 Operating Temperature - 20°C to +70°C S1T2418G01/D02 TONE RINGER WITH BRIDGE DIODE BLOCK DIAGRAM RECTIFIER CAPACITOR 7 ACTIVATION VOLTAGE ADJUSTABLE 6 - + POWER SUPPLY CONTROL CIRCUIT LOW FREQ OSC HIGH FREQ OSC OUTPUT AMP 5 OUTPUT RING 2 GND 3 SWEEP RATE CONTROL CAPACITOR 4 OUTPUT FREQUENCY CONTROL RESISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Calling Voltage (f = 50Hz) Continuous Calling Voltage (f = 50Hz) 5 sec ON / 10 sec OFF Supply Current Operating Temperature Storage and Junction Temperature VC Symbol Value 120 200 22 - 20 - + 70 - 65 - + 150 Unit Vrms Vrms m A °C °C VC(0N-OFF) ICC TORR TSTG NOTE: Absolute maximum ratings are those values beyond which permanent damage to the device may occur. These are stress ratings only and functional operation of the device at or beyond them is not implied. Long exposure to these conditions may affect device...