Samsung semiconductor S3C80F7
The S3C80F7/C80F9/C80G7/C80G9 single-chip CMOS microcontroller is fabricated using a highly advanced CMOS process and is based on Samsung's newest CPU architecture. The S3C80F9/C80G9 is the microcontroller which has 32-Kbyte mask-programmable ROM and S3C80F7/C80G7 is the microcontroller which has 24-Kbyte mask-programmable ROM. The S3P80F9/P80G9 is the microcontroller which has 32-Kbyte one-time-programmable EPROM and S3P80F7/P80G7 is the microcontroller which has 24-Kbyte one-time-programmable EPROM.| Part No. | S3C80F7 |
|---|---|
| Datasheet | S3C80F7 Download |
| Manufacturer |  Samsung semiconductor |
| Description | S3C8-SERIES MICROCONTROLLERS |
| Buy | Stock & Price |
FEATURES
CPU● Carrier Frequency Generator
● SAM87RC CPU core One 8-bit counter with auto-reload function and one-shot or repeat control (Counter A) Memory
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● 32-Kbyte internal ROM (S3C80F9/C80G9) : 0000H–7FFFH 24-Kbyte internal ROM (S3C80F7/C80G7) : 0000H–5FFFH Data memory: 272-byte RAM (318 register) Back-up mode
● When VDD is lower than VLVD, the chip enters Back-up mode to block oscillation and reduce the current consumption. In S3C80G7/C80G9, this function is disabled when operating state is “STOP mode”. Instruction Set
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● 78 instructions IDLE and STOP instructions added for powerdown modes
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● When RESET pin is lower than Input Low Voltage (VIL), the chip enters Back-up mode to block oscillation and reduce the current consumption. Instruction Execution Time
● Low Voltage Detect Circuit Low voltage detect to get into Back-up mode. Low level detect voltage − S3C80F7/C80F9: 2.20 V (Typ) ± 200mV − S3C80G7/C80G9: 1.90 V (Typ) ± 200mV 500 ns at 8-MHz fOSC (minimum) Interrupts
● 22 interrupt sources with 16 vector and 7 level.
