S8S3122X16 - 256K x 16 SDRAM

Datasheet Summary

Description

The S8S3122X16 is 4,194,304 bits synchronous high data rate Dynamic RAM organized as 2 x131,072 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (1K/16ms) CMOS SDRAM.

Samsung semiconductor

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Datasheet Details

Part number	S8S3122X16
Manufacturer	Samsung semiconductor
File Size	1.14 MB
Description	256K x 16 SDRAM
Datasheet	S8S3122X16 Datasheet
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S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 Revision History Version 0.0 (Sep. 2001) CMOS SDRAM Ver 0.0 Sep. '01 S8S3122X16 S Y S .

Published: May 17, 2005 |