S8S3122X16 Datasheet 256K x 16 SDRAM

Manufacturer: Samsung Semiconductor

S8S3122X16 256k x 16 sdram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	S8S3122X16
Manufacturer	Samsung Semiconductor
File Size	1.14 MB
Description	256K x 16 SDRAM
Download	S8S3122X16 Download (PDF)

Overview

S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice.

Ver 0.0 Sep.

'01 S8S3122X16 Revision History Version 0.0 (Sep.

Key Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (1K/16ms) CMOS SDRAM.

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