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2N5089 - NPN EPITAXIAL SILICON TRANSISTOR

Download the 2N5089 datasheet PDF. This datasheet also covers the 2N5088 variant, as both devices belong to the same npn epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5088-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.5 50 625 150 -55 ~ 150 Unit V V V V mA m&&W TO-92 1.Emitter 2. Base 3.