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K1S16161CA-I - 1Mx16 bit Page Mode Uni-Transistor Random Access Memory

General Description

The K1S16161CA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

Key Features

  • UtRAM.

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Other Datasheets by Samsung Semiconductor

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K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary K1S16161CA Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 December 2003 Preliminary K1S16161CA 1M x 16 bit Page Mode Uni-Transistor CMOS RAM FEATURES • • • • • UtRAM GENERAL DESCRIPTION The K1S16161CA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.