Download K4D261638K-LC40 Datasheet PDF
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K4D261638K-LC40 Key Features

  • 2.5V + 5% power supply for device operation
  • 2.5V + 5% power supply for I/O interface
  • SSTL_2 patible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs
  • Read latency 2,3(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • Wrtie-Interrupted by Read Function
  • 2 DQS’s ( 1DQS / Byte )

Related Samsung Semiconductor Datasheets

Part Number Description
K4D261638K-LC50 128Mbit GDDR SDRAM
K4D261638K 128Mbit GDDR SDRAM
K4D261638 128Mbit GDDR SDRAM
K4D261638F 128Mbit GDDR SDRAM
K4D263238A 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM

K4D261638K-LC40 Description

FOR 2M x 16Bit x 4 Bank DDR SDRAM The K4D261638K is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high.

K4D261638K-LC40 Applications

  • Samsung Electronics reserves the right to change products or specification without notice