• Part: K4D551638H-LC50
  • Description: 256Mbit GDDR SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 235.41 KB
K4D551638H-LC50 Datasheet (PDF) Download
Samsung Semiconductor
K4D551638H-LC50

Key Features

  • 2.35V ~ 2.7V power supply for device operation
  • 2.35V ~ 2.7V power supply for I/O interface
  • 4 banks operation
  • MRS cycle with address key programs
  • Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • No Write-Interrupted by Read Function
  • 2 DQS’s (1DQS / Byte)
  • Data I/O transactions on both edges of Data strobe