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K4D551638H-LC50 - 256Mbit GDDR SDRAM

This page provides the datasheet information for the K4D551638H-LC50, a member of the K4D551638H 256Mbit GDDR SDRAM family.

Description

The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

  • 2.35V ~ 2.7V power supply for device operation.
  • 2.35V ~ 2.7V power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of the system clock.
  • Differential clock input.
  • No Write-Interrupted by Read F.

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Datasheet preview – K4D551638H-LC50

Datasheet Details

Part number K4D551638H-LC50
Manufacturer Samsung
File Size 235.41 KB
Description 256Mbit GDDR SDRAM
Datasheet download datasheet K4D551638H-LC50 Datasheet
Additional preview pages of the K4D551638H-LC50 datasheet.

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Full PDF Text Transcription

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K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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