K4E660812B Overview
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional.
K4E660812B Key Features
- Part Identification
- K4E660812B-JC/L(3.3V, 8K Ref., SOJ)
- K4E640812B-JC/L(3.3V, 4K Ref., SOJ)
- K4E660812B-TC/L(3.3V, 8K Ref., TSOP)
- K4E640812B-TC/L(3.3V, 4K Ref., TSOP)
- Extended Data Out Mode operation
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Self-refresh capability (L-ver only)
- Fast parallel test mode capability
