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K4E660812C - 8M x 8bit CMOS Dynamic RAM

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Samsung

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K4E660812C 8M x 8bit CMOS Dynamic RAM by Samsung - Datasheet Preview — Datasheet preview – K4E660812C

Datasheet Details

Part number	K4E660812C
Manufacturer	Samsung
File Size	416.25 KB
Description	8M x 8bit CMOS Dynamic RAM
Datasheet	K4E660812C Datasheet
Additional preview pages of the K4E660812C datasheet.

Product details

Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📁 Similar Datasheet

K4E660812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)
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K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)

Other Datasheets by Samsung

K4E660812B - 8M x 8bit CMOS Dynamic RAM
K4E660412D - 16M x 4bit CMOS Dynamic RAM
K4E661612B - 4M x 16bit CMOS Dynamic RAM
K4E661612C - 4M x 16bit CMOS Dynamic RAM
K4E661612D - CMOS DRAM
K4E640412D - 16M x 4bit CMOS Dynamic RAM

Published: Apr 25, 2005 |