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K4E660812C Datasheet

Manufacturer: Samsung Semiconductor
K4E660812C datasheet preview

Datasheet Details

Part number K4E660812C
Datasheet K4E660812C_Samsungsemiconductor.pdf
File Size 416.25 KB
Manufacturer Samsung Semiconductor
Description 8M x 8bit CMOS Dynamic RAM
K4E660812C page 2 K4E660812C page 3

K4E660812C Overview

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional.

K4E660812C Key Features

  • Part Identification
  • K4E660812C-JC/L(3.3V, 8K Ref.)
  • K4E640812C-JC/L(3.3V, 4K Ref.)
  • K4E660812C-TC/L(3.3V, 8K Ref.)
  • K4E640812C-TC/L(3.3V, 4K Ref.)
  • Extended Data Out Mode operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Self-refresh capability (L-ver only)
  • Fast parallel test mode capability

K4E660812E from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung semiconductor Logo K4E660812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out Samsung semiconductor
Samsung Semiconductor logo - Manufacturer

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